Plane-wave Pseudopotential Approach Research Articles

Computational investigation of the structural, elastic, electronic, and thermodynamic properties of chloroperovskites GaXCl3 (X = Be, Ca, or Sr) using DFT framework

In this study, we employed the pseudopotential plane wave approach to examine the influence of the X atom (X = Be, Ca, or Sr) on the physical properties of isostructural chloroperovskites GaXCl3. The GGA-PBEsol functional was employed to simulate the exchange–correlation interactions. The computed equilibrium lattice parameters exhibit a high level of concordance with the existing theoretical findings. The cohesion energy and enthalpy of formation were computed to verify the energetic stability of the materials under consideration. The determined values of the single-crystal elastic constants (Cij) indicate that GaBeCl3 remains mechanically stable up to a hydrostatic pressure of 18 GPa. Similarly, GaCaCl3 preserves its stability up to 5 GPa, while GaSrCl3 remains mechanically stable up to 1.25 GPa. The projected Cij values were used to estimate several elastic moduli and related properties, including the shear and bulk moduli, sound wave speeds, Young’s modulus, Poisson’s ratio, and Debye temperature. The energy band structures of the studied compounds, as predicted by the HSE06 functional, demonstrate their wide bandgap semiconductor nature. Specifically, GaBeCl3 demonstrates an indirect bandgap of 3.828 eV, while GaCaCl3 reveals an indirect bandgap of 4.612 eV and GaSrCl3 has an indirect bandgap of 4.405 eV. The quasiharmonic Debye approach was employed to examine various thermal parameters, including the temperature dependence of the unit cell volume, bulk modulus, expansion coefficient, Debye temperature, isochoric and isobar heat capacities, Grüneisen parameter, and entropy function. It has been shown that GaBeCl3 demonstrates a lower thermal expansion coefficient and a higher Debye temperature in comparison to GaCaCl3 and GaSrCl3.

Bending deformation modulation of the optoelectronic properties of molybdenum ditelluride doped with nonmetallic atoms X (X = B, C, N, O): a first-principles study.

A first-principles approach based on density functional theory was used to explore the effect of bending deformation on the electrical structure of molybdenum ditelluride doped with nonmetallic atoms X (X = B, C, N, and O). The study included alternate doping of nonmetallic atoms, as well as a comparison of the effects of intrinsic bending deformation and nonmetallic doping deformation. The results demonstrate that boron atom doping raises the Fermi energy level. Examining the energy band structure indicates that the intrinsic molybdenum ditelluride is a direct band gap semiconductor, which is transformed from a direct band gap to an indirect band gap after doping. We selected boron-doped systems for bending deformation and compared them with the intrinsic systems. With increasing deformation, all systems start to shift from semiconductor to metal. When the deformation reaches 8°, the energy levels fill and the electron energy increases. The intrinsically bent systems transition from direct band gap to indirect band gap and eventually to metal. The indirect band gap semiconductor-to-metal transition process occurs after the bending deformation of the boron-doped atoms. The analytical results show that the absorption and reflection peaks of the molybdenum ditelluride system are blue-shifted after the bending deformation of the boron-doped atoms. Under fundamental principles, this research depends on the density functional theory framework (DFT) using the CASTEP module in the Materials-Studio software. The plane-wave pseudopotential approach with modified gradient approximation and the Perdew-Burke-Ernzerhof (PBE) generalized function is used for structure optimization and total energy calculations of the X-doped (X = B, C, N, O) MoTe2 system at different shape variables. Geometry optimization of the 27-atom superlattice MoTe2 was carried out, followed by alternative doping of tellurium atoms in the molybdenum ditelluride with B, C, N, and O. In this paper, the intrinsic bending deformation and B-doping of molybdenum ditelluride were selected for deformation analysis. Intrinsic bending deformations and boron-doped molybdenum ditelluride with bending angles ranging from 2° to 8° were employed for deformation investigation. In Fig.1, pink is used to represent doped B atoms, orange is used to describe Te atoms, and green is used to represent Mo atoms. For the degree of deformation of molybdenum ditelluride, in this paper, it is expressed by the bending angle, i.e., the angle of the plane of molybdenum ditelluride after bending and deformation of a single layer of molybdenum ditelluride concerning the angle of the plane folded for the deformed plane. How to do it: For ease of presentation, the atomic chains are set to different colors. The purple part on both sides of the figure is bent and deformed, 3-5 atoms are fixed appropriately, and the middle part is deformed. On this basis, the bending deformation of intrinsically doped and boron-doped MoTe2 is comparatively analyzed. The effect of boron-doped atoms on the structure of MoTe2 is systematically investigated to study its structural stability and electronic structure. Fig.1 a1 and a2 The main and side views of intrinsic MoTe2; b1 and (b2) the main and side views of MoTe2 doped with boron atoms bent by 8°.

Electronic, Elastic, Optical, and Thermodynamic Properties Study of Ytterbium Chalcogenides Using Density Functional Theory

In this study, the structural, electronic, optical, elastic, and thermodynamic properties of Ytterbium chalcogenides YbX (X = S, Se and Te) were computed within the first principles using generalized gradient approximation (GGA) as implemented in the pseudopotential plane wave approach. The equilibrium total energy for YbX (X = S, Se, and Te) was calculated as a function of the energy cutoff, k-point grid, and lattice parameter. An optimized lattice parameter of 5.6, 5.66, and 6.136 Å were calculated for YbS, YbSe, and YbTe, respectively. The energy band gaps of YbS, YbSe, and YbTe computed are 1.14, 1.32, and 1.48 eV, respectively. In addition, the low band gap (less than 3 eV) for ytterbium chalcogenides indicated that they may have potential applications in photovoltaic cells and laser diodes. Moreover, the negative dielectric function value for a certain frequency range indicates that these compounds are suitable for specific optical and microwave circuit applications. The result of elastic and thermodynamic property computation reveals that ytterbium chalcogenides are mechanically and thermodynamically stable, which can be useful in a variety of electronic device applications.

First-principles study of the effects of doping B, N, and O on the photoelectric properties of Cr adsorbed GaS.

To lessen the impact of the dangerous metal Cr, this paper applies the first principles to investigate the adsorption behavior and photoelectric properties of GaS on Cr. The effects of doped GaS on Cr adsorption behavior are investigated with four GaS systems, which are pure, boron (B)-doped, nitrogen (N)-doped, and oxygen (O)-doped, in order to maximize the characteristics of GaS for use in novel sectors, to obtain understanding of the impact of doping on the electronic structure and optical properties of GaS adsorption of Cr, as well as to promote the development of the material. Four GaS adsorbed Cr systems, pure, B-doped, N-doped, and O-doped, are optimized, and the optimized results show that the stable adsorption position of Cr on both pure and doped GaS is the top position of Ga atoms, whereas doped elements B, N, and O can promote the adsorption of Cr on GaS, and the order of the strength of this promotion is B > N > O. In this paper, molecular simulation calculations and analyses using the CASTEP module in the software Materials Studio are performed to simulate the structure optimization of GaS-adsorbed Cr materials doped with B, N, and O atoms by using the generalized gradient approximation (GGA) plane-wave pseudopotential approach [1] and the Perdew-Burke-Ernzerhof (PBE) generalized function [2]. From the convergence test, it is reasonable to set the K-point network to 4 × 4 × 1 and the truncation energy to 500eV [3]. In this paper, a 3 × 3 × 1 supercell structure with 18 S atoms and 18Ga atoms is selected. The convergence value of the iterative accuracy is 1.0e - 5eV/atom, and all the atomic forces are less than 0.02eV/Å. A vacuum layer of 16Å is also set in the C direction to avoid interlayer interactions of GaS. First, we optimize the geometry of the model and then analyze the nature of the adsorption energy and electronic structure corresponding to the model.

First-principles analysis of the structural, thermodynamic, elastic and thermoelectric properties of LuXCo2Sb2 (X = V, Nb and Ta) double half Heusler alloys

We used the pseudopotential plane wave approach, as implemented in the Quantum Espresso program, to investigate the impact of X atoms (V, Nb, and Ta) on the physical properties of LuXCo2Sb2 double half Heusler alloys. We determined the equilibrium structural parameters, including the crystal lattice parameters, atomic position coordinates, and bulk modulus, with and without including the spin-orbit effects. The predicted single-crystal elastic constants (Cij) show that the title compounds are mechanically stable with a pronounced elastic anisotropy. The bulk modulus, shear modulus, Young's modulus, Poisson coefficient, Debye temperature, and Vickers hardness coefficient were deduced from Cij via the Voigt-Reuss-Hill approximations. We also determined the variations of some macroscopic physical parameters as functions of temperature and pressure, namely the thermal expansion coefficient, lattice thermal conductivity, heat capacity at constant volume, Debye temperature and entropy. The considered alloys demonstrate special thermal properties under pressure and heat conditions, specifically, their low thermal expansion coefficient and lattice thermal conductivity; their thermal expansion coefficient is lower than 4.5 × 10−5 K−1 at 1000 K, and lattice thermal conductivity don’t exceed 1 W.m−1 K−1 for temperatures higher than 300 K. Furthermore, we investigated the temperature and charge carrier concentration dependencies of some thermoelectric coefficients. The results of this study reveal the potential of the considered compounds for achieving a figure of merit greater than 0.5 at a temperature of 500 K and a doping concentration of 1020 cm−3.

B-doping on the electronic structure and photocatalytic properties of g-C3N4/Janus PtSSe heterojunctions: A first-principles study

The effect of B doping on the stability, electronic structure, work function, and optical properties of g-C3N4/Janus PtSSe heterojunctions has been investigated based on the density-functional theory plane-wave ultrasoft pseudopotential approach. It is shown that the binding energy of g-C3N4/PtSSe after B doping is negative and has a low layer spacing and lattice mismatch rate. It is stable at a room temperature of 300 K, proving its structural and thermodynamic stability. B-atom doping of g-C3N4/SPtSe and g-C3N4/SePtS heterojunctions leads to the upward shift of the Fermi energy level resulting in a significant reduction of the band gap and significant orbital hybridization. The impurity band near the Fermi energy level easily transfers electrons from the valence band into the conduction band, which makes electron leaps easier. Different built-in electric fields are formed when the g-C3N4 and Se(S) atomic layers are in contact. The reduction of the bandgap after B doping enables the photogenerated electron-hole pairs between the heterojunction interfaces to be better separated under the action of the built-in electric field, which reduces the composite rate of the electron-hole pairs and greatly improves the carrier migration and photocatalytic performance. The absorption and reflection coefficients of g-C3N4/SPtSe-BNC and g-C3N4/SePtS-BNC are the highest and decrease slowly in the visible region, which indicates that they have the optimal photocatalytic performance, and they can effectively broaden the range of light absorption and promote the utilization of light. The introduction of the B–B bonding effectively improves the photocatalytic activity of the heterojunction.

Pressure-induced metallization in the absence of a structural transition in the layered transition-metal dichalcogenide ZrSe2.

First-principles calculations were carried out on the ZrSe2 compound, which has been of interest owing to its technologically important physical properties. The structural, electronic and optical properties of this compound were investigated under pressure through the plane wave pseudopotential approach within the framework of density functional theory. A comparison between the computed crystal structure parameters and the corresponding experimental counterparts shows a very good agreement between them. Fitting the pressure-volume data using the third-order Birch-Murnaghan equation of state yielded a bulk modulus B0 = 38.17 GPa and a pressure derivative of bulk modulus B'0 = 8.2 for hexagonal ZrSe2. The relationship between the band structure and pressure is revealed. We calculated the total density of state (TDOS) under different pressures and partial density of state (PDOS) from 0 to 10 GPa. According to our calculations, metallization of hexagonal ZrSe2 is predicted to occur at around 10 GPa and pressure-induced band-gap engineering reveals the transformation of the indirect to direct band gap with increasing pressure. Furthermore, optical properties, such as the complex dielectric function, refractive index and reflectivity spectra of this compound, were studied for incident electromagnetic waves in an energy range up to 45 eV. The contributions to various transition peaks in the optical spectra are analyzed and discussed with the help of the energy-dependent imaginary part of the dielectric function.

Stochastic and mixed density functional theory within the projector augmented wave formalism for simulation of warm dense matter.

Stochastic density functional theory (DFT) and mixed stochastic-deterministic DFT are burgeoning approaches for the calculation of the equationof state and transport properties in materials under extreme conditions. In the intermediate warm dense matter regime, a state between correlated condensed matter and kinetic plasma, electrons can range from being highly localized around nuclei to delocalized over the whole simulation cell. The plane-wave basis pseudopotential approach is thus the typical tool of choice for modeling such systems at the DFT level. Unfortunately, stochastic DFT methods scale as the square of the maximum plane-wave energy in this basis. To reduce the effect of this scaling and improve the overall description of the electrons within the pseudopotential approximation, we present stochastic and mixed DFT approaches developed and implemented within the projector augmented wave formalism. We compare results between the different DFT approaches for both single-point and molecular dynamics trajectories and present calculations of self-diffusion coefficients of solid density carbon from 1 to 50eV.

Structural, electronic, optical and vibrational properties of CdSiP2 from first-principles

We report the results of a first-principles research of the structural, electronic, linear and nonlinear responses, and vibrational properties of CdSiP2 based on the density functional theory using pseudopotential plane-wave approach. We calculate the energy band structure, dielectric function, absorption coefficient, reflectivity, refractive index, SHG susceptibility, and phonon dispersion curves. In order to obtain accurate band gap value of CdSiP2, the GW approximation method is used to calculate the quasiparticle band structure and the corrected band gap value is in excellent agreement with experimental measurements. Furthermore, the corrected band gap can be used as scissor shift for linear and nonlinear optical properties calculations. The linear-response theory is used to derive the phonon dispersion curves and density of states. All zone-center phonon modes are calculated and LO-TO splitting of the infrared modes are identified. The results show a good agreement with available experimental data and other calculations.

Structural, elastic, and thermodynamic properties of BaXCl3 (X = Li, Na) perovskites under pressure effect: ab initio exploration

In this study, we employed the ab initio pseudopotential plane wave approach, utilizing the GGA-PBEsol exchange-correlation functional, to investigate the structural, elastic, and thermodynamic properties of BaXCl3 (X = Li, Na) perovskites under hydrostatic pressures ranging from 0 to 18 GPa. Apart from utilizing the GGA-PBEsol functional, this study also employed the GGA-PBE, GGA-WC, and LDA functionals to simulate the exchange-correlation interactions for computing the structural parameters. Our results show that the optimized lattice parameters are in good agreement with previously predicted values. Based on the calculated elastic moduli of a single crystal, we found that both BaLiCl3 and BaNaCl3 perovskites retain mechanical stability under hydrostatic pressures of up to 18 GPa. Furthermore, we calculated several other important parameters that describe the polycrystalline aggregates of these compounds, including the modulus of compressibility, the shear modulus, the Poisson’s ratio, Young’s modulus, the speeds of sound, and the Debye temperature. Additionally, we examined the temperature and pressure dependencies of the thermal coefficients of the perovskites using the quasi-harmonic approximation. Notably, all of the results presented in this study are reported for the first time and require further confirmation through experimental investigations. We hope that our findings contribute to a more comprehensive understanding of the structural and thermodynamic properties of BaXCl3 (X = Li, Na) perovskites under pressure.

Electronic and magnetic properties of Half Heusler alloy NiCrSi

Utilizing the Quantum Espresso Package and the plane wave pseudopotential approach, the electrical and magnetic characteristics of the Half Heusler alloy NiCrSi have been investigated.Ultrasoft pseudo-potential is used for this calculation. Through our calculation, it was revealed that NiCrSi is a half-metallic ferromagnet in nature with a bandgap of 0.81eV and an effective moment of 2µB respectively. The origin of the gap is mainly due to the covalent band gap and d-d band gap in the system separating bonding states from anti-bonding states. Our calculation predicts a larger spin moment at Cr site than at Ni site which is antiparallel to the moment of Si. The hybridization of Ni- 3d and Cr-4d states can open a minority spin gap at Ef resulting in the semi-conducting nature of the minority spin band.

Structural, vibrational, electronic, thermodynamic and thermoelectric properties of CaCdSi Half Heusler compound: A first-principles study

The new half-Heusler CaCdSi alloy, as a new crucial nonmagnetic thermoelectric candidate, is desired to be understood in terms of its potential physical properties and stability in both experimental and theoretical studies. Here we investigate the thermal properties of half-Heusler CaCdSi using the plane-wave pseudopotential approach based on the density functional theory within the generalized gradient approximation (GGA). Firstly, dynamical and mechanical stability was assured in its cubic phase. These results also elucidate the stable and brittle nature of the compound. Furthermore, electronic band structure calculation shows that the CaCdSi alloy has semiconductor behavior with a direct band gap of 0.59 eV. Lastly, the Seebeck coefficient, electronic conductivity, electronic thermal conductivity, the power factor, and figure of merit have been investigated using the semi-classical Boltzmann transport theory. The high value of ZT of the CaCdSi alloy makes it a potential candidate material for thermoelectric applications. Our research not only enriches the family of thermoelectric materials but also provides a good platform for further experimental investigations.

Structural, Electronic, Mechanical, and Thermodynamic Properties of Na Deintercalation from Olivine NaMnPO4: First-Principles Study.

The impact of Na atom deintercalation on olivine NaMnPO4 was investigated in a first-principle study for prospective use as cathode materials in Na-ion batteries. Within the generalized gradient approximation functional with Hubbard (U) correction, we used the plane-wave pseudopotential approach. The calculated equilibrium lattice constants are within 5% of the experimental data. The difference in equilibrium cell volumes for all deintercalated phases was only 6%, showing that NaMPO4 is structurally more stable. The predicted voltage window was found to be between 3.997 and 3.848 V. The Na1MnPO4 and MnPO4 structures are likely to be semiconductors, but the Na0.75MnPO4, Na0.5MnPO4, and Na0.25MnPO4 structures are likely to be metallic. Furthermore, all independent elastic constants for NaxMPO4 structures were shown to meet the mechanical stability requirement of the orthorhombic lattice system.

Structural properties of NaBeH3 material: Ab-initio calculations

Ab-initio calculations from first principle methods were performed toinvestigate the structural properties of perovskite-type hydride NaBeH3material. The pseudopotential plane-wave approach in the framework ofdensity functional theory (DFT) as implemented in the ABINIT codecomputer was used. The exchange-correlation functional for all elementsof our material of interest was described with the local densityapproximation (LDA). Our results of the equilibrium lattice parameter, thebulk modulus, and the pressure derivative of the bulk modulus of cubicNaBeH3 semiconducting material were found at around 3.335 Å (3.339Å), 65.64 GPa and 3.56, respectively. Our data are in good agreementwith the available theoretical data of the literature. In addition, the meltingpoint of our material of interest was calculated and found equal to 1217.45K. To the best of the authors' knowledge, no data is available in theliterature on the melting point of NaBeH 3 material.
  
  

Performance of the modified Becke–Johnson potential employing the pseudopotential plane-wave approach for band structure calculations

The modified Becke–Johnson exchange potential combined with local-density approximation correlation (mBJLDA) has recently attracted interest because it provides highly improved band gaps at a very low computational cost. In this work we performed an extensive investigation of the performance of the mBJLDA potential employing a norm-conserving pseudopotential plane-waves approach (mBJLDA@PP), as implemented in the abinit code, using a test set of 83 solids representing a wide range of semiconductors and insulators. Our results confirm the conclusion of our previous study that the number of electrons treated as valence in the pseudopotentials of the cations can have a significant impact on the calculated mBJLDA@PP band gaps. More specifically, while the use of typical pseudopotentials leads to accurate band gaps of certain systems, it yields significantly underestimated band gaps for other systems compared to experiment and to those of the all-electron mBJLDA (mBJLDA@AE) approach. The classes of the latter systems are identified, and this problem is resolved by including some outer core states as valence. The resulting mean absolute error in the calculated band gaps (compared to experiment) is of 0.46 eV, which is comparable to that of the mBJLDA@AE band gaps, reflecting the accuracy and reliability of the mBJLDA@PP approach for the band gap calculations.

Engineering the hydrogen storage properties of the perovskite hydride ZrNiH3 by uniaxial/biaxial strain

In the present work, the bonding length, electronic structure, stability, and dehydrogenation properties of the Perovskite-type ZrNiH3 hydride, under different uniaxial/biaxial strains are investigated through ab-initio calculations based on the plane-wave pseudo-potential (PW-PP) approach. The findings reveal that the uniaxial/biaxial compressive and tensile strains are responsible for the structural deformation of the ZrNiH3 crystal structure, and its lattice deformation becomes more significant with decreasing or increasing the strain magnitude. Due to the strain energy contribution, the uniaxial/biaxial strain not only lowers the stability of ZrNiH3 but also decreases considerably the dehydrogenation enthalpy and decomposition temperature. Precisely, the formation enthalpy and decomposition temperature are reduced from −67.73 kJ/mol.H2 and 521 K for non-strained ZrNiH3 up to −33.73 kJ/mol.H2 and 259.5 K under maximal biaxial compression strain of ε = −6%, and to −50.99 kJ/mol.H2 and 392.23 K for the maximal biaxial tensile strain of ε = +6%. The same phenomenon has been also observed for the uniaxial strain, where the formation enthalpy and decomposition temperature are both decreased to −39.36 kJ/mol.H2 and 302.78 K for a maximal uniaxial compressive strain of ε = - 12%, and to −51.86 kJ/mol.H2 and 399 K under the maximal uniaxial tensile strain of ε = +12%. Moreover, the densities of states analysis suggests that the strain-induced variation in the dehydrogenation and structural properties of ZrNiH3 are strongly related to the Fermi level value of total densities of states. These ab-initio calculations demonstrate insightful novel approach into the development of Zr-based intermetallic hydrides for hydrogen storage practical applications.

Effect of Sr - Transition Metal Substitution on Electronic and Mechanical Properties of Mg2Si: A DFT Study

Abstract: Recently, magnesium alloys have attracted scientific interest due to their technological importance in thermoelectric, piezoelectric, photo-voltaic and infrared photonics applications. The electronic and elastic properties of MgXSi (X = Mg, Sr) compounds were investigated in this work, using the density functional theory (DFT) with pseudo-potential plane-waves (PPW) approach as implemented in Quantum Espresso code. The results of the elastic constants of Mg2Si are in agreement with the previous theoretical results and favourably compared with experimental data. The electronic band structures of these semiconductors were calculated to give narrow indirect and direct band gaps of Mg2Si and MgSrSi, respectively. Our results show that the two compounds are mechanically stable. The Pugh’s ratio, B/G, indicated that Mg2Si and MgSrSi are brittle and ductile in nature. The estimated anisotropy parameter, A, shows that Mg2Si has a higher degree of elastic isotropy in comparison to MgSrSi. Three-dimensional (3D) projection of Young’s modulus and area modulus of the compounds was presented. Keywords: Electronic structure, Elastic constants, Mechanical properties, Mg2Si, MgSrSi. PACS: 31.15.A-, 62.20.F-, 71.55.-i, 71.20.Be.

Ab initio study of the structure, elastic, and electronic properties of Ti3(Al1\u2212nSin)C2 layered ternary compounds

The MAX phase materials such as layered ternary carbides that simultaneously exhibit characteristics of metallic and ceramic materials have received substantial interest in recent years. Here, we present a systematic investigation of the electronic, structural stabilities, and elastic properties of Ti3(Al1−nSin)C2 (n = 0,1) MAX phase materials using the ab initio method via a plane-wave pseudopotential approach within generalized-gradient-approximations. The computed electronic band structures and projected density of states show that both Ti3SiC2 and Ti3AlC2 are metallic materials with a high density of states at the Fermi level emanating mainly from Ti-3d. Using the calculated elastic constants, the mechanical stability of the compounds was confirmed following the Born stability criteria for hexagonal structures. The Cauchy pressure and the Pugh’s ratio values establish the brittle nature of the Ti3SiC2 and Ti3AlC2 MAX phase materials. Due to their intriguing physical properties, these materials are expected to be suitable for applications such as thermal shock refractories and electrical contact coatings.

Effect of spin-orbital coupling on the electronic, mechanical, thermoelectric, and vibrational properties of XPtBi (X = Sc and Y): A first-principles study

Heusler compounds constitute a versatile class of materials, as evidenced by their numerous technological applications. Herein, we report a comparative study of the electronic, mechanical, vibrational, and thermoelectric properties of half-Heusler compounds XPtBi (X = Sc and Y) based on first-principles calculations, with and without spin-orbital coupling (SOC). The plane-wave pseudo-potential approach within density functional theory (DFT) and the Boltzmann transport equations have been used to compute these properties. SOC has a considerable effect on the electronic band structures of XPtBi (X = Sc and Y), leading to band inversion without breaking any symmetry. This band inversion results in the emergence of a topological phase in ScPtBi and YPtBi. Phonon dispersion curves and phonon densities of state have been calculated for these compounds, with and without SOC, for comparison. The calculations also reveal that, with the inclusion of SOC, these materials have improved thermoelectric properties, with figures of merit (ZT) of 0.41 for ScPtBi and 0.35 for YPtBi at 1200 K. Hence, these are promising thermoelectric materials for use at higher temperatures.

Modified Becke-Johnson calculations using norm-conserving pseudopotential plane-wave approach: Systematic analysis

The modified Becke-Johnson potential for exchange and local density approximation for correlation (mBJLDA) approach is proved to provide a highly improved description of the bandgap. This work presents the results of a systematic investigation of the mBJLDA electronic band structure calculations using the norm-conserving pseudopotential (PP) approach, as implemented in the ABINIT code. The considered systems represent different classes of semiconductors and insulators. Moreover, all-electron (AE) mBJLDA potential and screened hybrid functional YS-PBE0 calculations are also performed for comparison purposes. We show that the mBJLDA@PP bandgaps obtained using typical PP's (i.e., valence and semicore electrons are allowed to relax) are generally speaking smaller than that of the mBJLDA@AE approach. This artifact cannot be attributed to a small “c” parameter of the mBJLDA, since we found that this parameter is quite insensitive to the adopted computational method. Interestingly, the number of electrons treated as valence, especially for the cations, can be used as an extra adjustable parameter to improve the mBJLDA@PP bandgaps. In particular, the best agreement with the mBJLDA@AE bandgaps is obtained by including the outer core p electrons as valence. The optimal PP's for mBJLDA@PP calculations are transferable. A similar agreement is also achieved for the binding energies of the semicore d electrons (in the IIB-VI and IIIB-V compounds), upper valence bandwidths and electron effective masses. Sound explanations of the mBJLDA@PP results for the considered electronic structure properties are provided.